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Productum consistit in moduli detectoris, qui per 4x4 connexionem flip-chip connexis conglobatur in GaAs unius photon avalanche diodi (SPAD) astulae et CMOS principale passivum exstinguentis circuli chip, una cum voltage inverso moduli, moduli refrigerii; et inlustris potestate moduli. In operatione Geiger-modus, singula elementa detectoris componentis independenter ac libere operatur, signa levia levia detecta in ambitu prope infrascripto necem 0.95 ad 1.65 micrometris et in electricis significationibus TLL electricis temporis output praebens.
| Parametri&Index | |
| Morbi Technical | Index technica |
| Type fabrica | InGaas APD |
| Ordinare Location | 4x4 |
| Location Trabajos | | 100μm x 100μm |
| Photosensitive Area Size | 85μm x 85μm |
| Fenestra optical | Vicus fenestra optica |
| Procul Photosensitive Superficies ad Optical Fenestra | 4mm (crassitudo fenestrae: 1mm) |
| Operans Necem | 0.95μm ad 1.65μm |
| Deprehensio Efficens | ≥10% (ad 1.57±0.05μm) |
| Tenebris Comes Rate | ≤10KHz |
| Tempus Jitter | ≤500ps |
| mortuus tempore | Adjustable from 100 to 1000ns |
| Efficens Pixel Rate | 100% |
| Operating Temperature | -40 55 ° C ad F + |
| Calor PRAECLUSIO | -40 70 ° C ad F + |
| Potentia consummatio | ≤15W |
