InGaAs linear array focal plane sensor Việt Nam
Key Advantage
Long linear array small pixel with high resolution
512X2 dual line column output
High pixel readout rate (14MHz
Maximum line frequency 20KHz
Four gear gain options
Suitable for multi scenario application needs
32 pin ceramic Dual in-line package
Typical Applications:
Foreign object screening
Agricultural product testing
Line scan imaging
Industrial non-destructive testing
Spectral analysis
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The GD-NIR512L2-CD shortwave infrared InGaAs linear array sensor has the characteristics of high sensitivity, low noise, and low dark current. The sensor is composed of InGaAs photodiode array chips and CMOS signal processing circuit chips. It is conductive connected through indium (In) convex dot arrays and can be widely used in fields such as agricultural product detection, industrial detection, and optoelectronic detection.
The sensor is composed of two independent 1X512 structured circuits, each containing 512 rubber channels. Each channel contains a charge amplification circuit, a CDS gain circuit, a hold circuit, a column buffer circuit, and a control circuit logic. The input stage adopts a CTIA structure with multiple levels of charge voltage conversion gain, supports anti corona and correlated dual adoption (CDS) noise reduction functions, and supports two forms of cooling and non cooling.
Parameters&Index | |
Technical Parameters | Technical Index |
Device Type | InGaAs p-on-n Type |
Scale of Array | 2X512 |
Pixel Size | 25umX25um |
Size of Photosensitive Surface | 0.05mmX12.8mm |
Packaging Form | 32-DIP Ceramic Shell Resin Packaging |
Optoelectronic Characteristics @ 22±3°C | |
Maximum Line Frequency | 20KHz |
Maximum Pixel Readout Rate | 14KHz |
Integral Time | ≥10us Greater than or equal to 10us |
Spectral Response Range | 0.92~1.65um |
Readout Noise | ≤60e(RMS)@10KHz,High Gain |
Dynamic Atmosphere | ≥60dB |
Electrical Characteristics | |
Operating Temperature Range | -20° C~+60° C |
Maximum Working Power Consumption | 300mW |
Pixel Bias Range | -0.5V~0V |
ESD Anti-static Level | 800V~1000V |