All Categories

Optoelectronic Integrated Devices

Home >  Products  >  Optoelectronic Integrated Devices

InGaAs avalanche photodiode

InGaAs avalanche photodiode

Key Advantage:

High Responsiveness

Low Capacitance, Low Noise

High Operating Frequency

High Reliability

Typical Applications:

High-speed optical fiber communication

Fiber optic sensing

Rapid optical pulse detection

Laser ranging

Single-photon detection

  • Overview
  • Parameter
  • Inquiry
  • Related Products

The InGaAs Geiger-mode avalanche photodiode (APD) is a product specifically designed for single-photon counting applications. This device operates in "Geiger mode" by applying a voltage higher than the breakdown voltage, causing incident photons to generate a large current due to the substantial gain within the avalanche diode, effectively enabling the detection of single photons. When combined with matching external pulse detection circuits, it enables single-photon detection in the wavelength range of 0.95-1.65 micrometers.

The product is available in two packaging structures: T0 coaxial pigtail and integrated cryogenic butterfly, and can also be customized for specific customer application requirements.

Periodic poling is achieved through quasi-phase matching techniques, where an external electric field is applied to the lithium niobate crystal to periodically reverse the spontaneous polarization direction of the crystal's ferroelectric domains. This solves the phase mismatch problem, enabling frequency conversion for different wavelengths.

Based on periodically poled lithium niobate (PPLN) RPE waveguides, in the communication wavelength range of 1550nm, transmission losses can be reduced to as low as 0.1dB/cm, and coupling losses with optical fibers can be minimized to 0.5dB. These technical specifications have reached an international leading level.

Parameters&Index
Technical Parameters Technical Index
Reverse Breakdown voltage ≤90V(@Tamb=25°C±3°C,IR=10uA, Φe=0)
Dark current ≤2nA(@Tamb=25°C±3°C,VDC=(VBR-1)V, Φe=0)
Detection Efficiency 20%(@Tth=-30°C±3°C,fgate=1.25GHz,λ=1550nm±50nm)
Dark Count Rate ≤5kHz(@Tth=-30°C±3°C,fgate=1.25GHz,PDE=20%)
Afterpulse Probability ≤6%(@Tth=-30°C±5°C,λ=1550nm±50nm,fgate=1.25GHz,PDE=20%,tdead=1000ns)
TEC Cooling Temperature Difference ≤60°C(@ITEC=Imax,Tamb=+50°C,PED=20%)
Operating Temperature -40-45°C
Storage Temperature -50-70°C
Cooler Power Consumption ≤9.52W
Electrostatic Discharge Sensitivity 250V
Maximum Voltage Value of Refrigerator 11.9V
Maximum Current Value of Refrigerator 0.8A
NTC (Temperature Sensitive Resistor) RT=10KΩ@25°C
Sampling Resistor TR Resistance Range 50Ω±10Ω

GET IN TOUCH