InGaAs avalanche photodetector Россия

This product is a compact near-infrared avalanche photodetector. The core device adopts InGaAs/InP APD with domestic independent intellectual property rights, which has the characteristics of high gain, high sensitivity and low noise. It can provide a cost-effective solution for near-infrared weak light detection and short pulse signal measurement, and is widely used in laser communication, laser radar and other fields.
This product works in linear mode, integrates a low-noise broadband transimpedance amplifier, can achieve a maximum conversion gain of 5.2×106v/w, and supports gain adjustment, and uses a temperature compensation circuit to achieve temperature stability control of the multiplication factor. The diameter of the photosensitive surface is up to 200um, and the noise equivalent power is as low as 0.35nW under the working bandwidth of 10MHz. It supports free space coupling and fiber coupling. At the same time, the internal integrated strong light injection protection function makes the product have higher environmental adaptability.